US PATENT SUBCLASS 438 / 238
.~.~ Including passive device (e.g., resistor, capacitor, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238.~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~> Capacitor {5}

DEFINITION

Classification: 438/238

Including passive device (e.g., resistor, capacitor, etc.):

(under subclass 197) Process for making an insulated gate field effect transistor having combined therewith an electrical device or component in which charge carriers do not change their energy levels and do not provide electrical rectification, amplification, or switching, but which does react to voltage and current input.

SEE OR SEARCH THIS CLASS, SUBCLASS:

273, for a process of making an insulated gate field effect transistor which possesses an integral short of the active regions of a single transistor.