| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
| 238 | DF | .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1} |
| 239 |  | .~.~.~ Capacitor {5} |
| 240 | DF | .~.~.~.~> Having high dielectric constant insulator (e.g., Ta2O5, etc.) |
| 241 | DF | .~.~.~.~> And additional field effect transistor (e.g., sense or access transistor, etc.) {1} |
| 243 | DF | .~.~.~.~> Trench capacitor {3} |
| 250 | DF | .~.~.~.~> Planar capacitor {1} |
| 253 | DF | .~.~.~.~> Stacked capacitor {3} |