US PATENT SUBCLASS 438 / 240
.~.~.~.~ Having high dielectric constant insulator (e.g., Ta2O5, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
240.~.~.~.~ Having high dielectric constant insulator (e.g., Ta2O5, etc.)

DEFINITION

Classification: 438/240

Having high dielectric constant insulator (e.g., Ta2O5, etc.):

(under subclass 239) Process wherein the capacitor dielectric is constructed of a material having a dielectric constant of greater than 7.5, the dielectric constant of Si3N4.