US PATENT SUBCLASS 438 / 241
.~.~.~.~ And additional field effect transistor (e.g., sense or access transistor, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
241.~.~.~.~ And additional field effect transistor (e.g., sense or access transistor, etc.) {1}
242  DF  .~.~.~.~.~> Including transistor formed on trench sidewalls

DEFINITION

Classification: 438/241

And additional field effect transistor (e.g., sense or access transistor, etc.):

(under subclass 239) Process for making an insulated gate field effect transistor having combined therewith a capacitor and an additional field effect transistor.

SEE OR SEARCH THIS CLASS, SUBCLASS:

258, for process of making a floating gate-type insulated gate field effect transistor having combined therewith an additional insulated gate field effect transistor.