US PATENT SUBCLASS 438 / 242
.~.~.~.~.~ Including transistor formed on trench sidewalls

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
241  DF  .~.~.~.~ And additional field effect transistor (e.g., sense or access transistor, etc.) {1}
242.~.~.~.~.~ Including transistor formed on trench sidewalls

DEFINITION

Classification: 438/242

Including transistor formed on trench sidewalls:

(under subclass 241) Process wherein the additional diverse field effect transistor is formed on the side-walls of a groove formed in the semiconductor substrate.

(1) Note. The access transistor serves to sense the storage of electrical charges on the capacitor.