US PATENT SUBCLASS 438 / 250
.~.~.~.~ Planar capacitor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
250.~.~.~.~ Planar capacitor {1}
251  DF  .~.~.~.~.~> Including doping of semiconductive region {1}

DEFINITION

Classification: 438/250

Planar capacitor:

(under subclass 239) Process for making an insulated gate field effect transistor combined with a capacitor wherein a generally planar region of the semiconductive substrate forms a first capacitor plate with the capacitor dielectric and a second capacitor plate formed thereupon.