US PATENT SUBCLASS 438 / 251
.~.~.~.~.~ Including doping of semiconductive region

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
250  DF  .~.~.~.~ Planar capacitor {1}
251.~.~.~.~.~ Including doping of semiconductive region {1}
252  DF  .~.~.~.~.~.~> Multiple doping steps

DEFINITION

Classification: 438/251

Including doping of semiconductive region:

(under subclass 250) Process having a step of introducing an electrically active dopant species into a semiconductive region of the substrate forming the first capacitor plate.