US PATENT SUBCLASS 438 / 246
.~.~.~.~.~ Including doping of trench surfaces

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
243  DF  .~.~.~.~ Trench capacitor {3}
246.~.~.~.~.~ Including doping of trench surfaces {3}
247  DF  .~.~.~.~.~.~> Multiple doping steps
248  DF  .~.~.~.~.~.~> Including isolation means formed in trench
249  DF  .~.~.~.~.~.~> Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)

DEFINITION

Classification: 438/246

Including doping of trench surfaces:

(under subclass 243) Process having a step of introducing electrically active dopant species into the surfaces of the groove in which the capacitor is located.

SEE OR SEARCH THIS CLASS, SUBCLASS:

524, for a process of implanting a dopant into a grooved semiconductive region.