US PATENT SUBCLASS 438 / 249
.~.~.~.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
243  DF  .~.~.~.~ Trench capacitor {3}
246  DF  .~.~.~.~.~ Including doping of trench surfaces {3}
249.~.~.~.~.~.~ Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.)

DEFINITION

Classification: 438/249

Doping by outdiffusion from a dopant source layer (e.g., doped oxide, etc.):

(under subclass 246) Process wherein doping the trench surfaces is via diffusion from an adjacent dopant source layer formed thereupon.