US PATENT SUBCLASS 438 / 245
.~.~.~.~.~ With epitaxial layer formed over the trench

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
238  DF  .~.~ Including passive device (e.g., resistor, capacitor, etc.) {1}
239  DF  .~.~.~ Capacitor {5}
243  DF  .~.~.~.~ Trench capacitor {3}
245.~.~.~.~.~ With epitaxial layer formed over the trench

DEFINITION

Classification: 438/245

With epitaxial layer formed over the trench:

(under subclass 243) Process including a step of forming an epitaxial semiconductive layer over the trench region.