US PATENT SUBCLASS 438 / 365
.~.~ Forming active region from adjacent doped polycrystalline or amorphous semiconductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
365.~.~ Forming active region from adjacent doped polycrystalline or amorphous semiconductor {2}
366  DF  .~.~.~> Having sidewall {1}
368  DF  .~.~.~> Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

DEFINITION

Classification: 438/365

Forming active region from adjacent doped polycrystalline or amorphous semiconductor:

(under subclass 364) Process having an active region (e.g., base, emitter, or collector) formed of polycrystalline or amorphous semiconductor.