US PATENT SUBCLASS 438 / 366
.~.~.~ Having sidewall

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
365  DF  .~.~ Forming active region from adjacent doped polycrystalline or amorphous semiconductor {2}
366.~.~.~ Having sidewall {1}
367  DF  .~.~.~.~> Including conductive component

DEFINITION

Classification: 438/366

Having sidewall:

(under subclass 365) Process including forming dielectric isolation on the sidewall of the base region to separate the base and collector regions.