US PATENT SUBCLASS 438 / 368
.~.~.~ Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

309  DF  FORMING BIPOLAR TRANSISTOR BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {25}
364  DF  .~ Self-aligned {2}
365  DF  .~.~ Forming active region from adjacent doped polycrystalline or amorphous semiconductor {2}
368.~.~.~ Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor

DEFINITION

Classification: 438/368

Simultaneously outdiffusing plural dopants from polysilicon or amorphous semiconductor:

(under subclass 365) Process including the simultaneous outdiffusing of electrically active dopants from the

polysilicon or amorphous active region.