| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
| FOR 155 | DF | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
| FOR 173 | DF | .~.~.~ Involving Schottky contact formation (437/39) {12} |
| FOR 202 |  | .~.~.~.~ Gate structure constructed of diverse dielectrics (437/42) {20} |
| FOR 203 | DF | .~.~.~.~.~> Gate surrounded by dielectric layer, e.g., floating gate, etc. (437/43) |
| FOR 204 | DF | .~.~.~.~.~> Adjusting channel dimension (437/44) |
| FOR 205 | DF | .~.~.~.~.~> Active step for controlling threshold voltage (437/45) |
| FOR 185 | DF | .~.~.~.~.~> Self-aligned (437/41 R) |
| FOR 186 | DD | .~.~.~.~.~> With bipolar (437/41 RBP) |
| FOR 187 | DD | .~.~.~.~.~> CMOS (437/41 RCM) |
| FOR 188 | DD | .~.~.~.~.~> Lightly doped drain (437/41 RLD) |
| FOR 189 | DD | .~.~.~.~.~> Memory devices (437/41 RMM) |
| FOR 190 | DD | .~.~.~.~.~> Asymmetrical FET (437/41 AS) |
| FOR 191 | DD | .~.~.~.~.~> Channel specifics (437/41 CS) |
| FOR 192 | DD | .~.~.~.~.~> DMOS/vertical FET (437/41 DM) |
| FOR 193 | DD | .~.~.~.~.~> Gate specifics (437/41 GS) |
| FOR 194 | DD | .~.~.~.~.~> Junction FET/static induction transistor (437/41 JF) |
| FOR 195 | DD | .~.~.~.~.~> Layered channel (437/41 LC) |
| FOR 196 | DD | .~.~.~.~.~> Specifics of metallization/contact (437/41 SM) |
| FOR 197 | DD | .~.~.~.~.~> Recessed gate (Schottky falls below in SH) (437/41 RG) |
| FOR 198 | DD | .~.~.~.~.~> Schottky gate/MESFET (437/41 SH) |
| FOR 199 | DD | .~.~.~.~.~> Sidewall (437/41 SW) |
| FOR 200 | DD | .~.~.~.~.~> Thin film transistor, inverted (437/41 TFI) |
| FOR 201 | DD | .~.~.~.~.~> Thin film transistor (437/41 TFT) |