| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
| FOR 155 | DF | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
| FOR 173 |  | .~.~.~ Involving Schottky contact formation (437/39) {12} |
| FOR 202 | DF | .~.~.~.~> Gate structure constructed of diverse dielectrics (437/42) {20} |
| FOR 174 | DF | .~.~.~.~> Forming pair of device regions separated by gate structure, i.e., FET (437/40 R) |
| FOR 175 | DD | .~.~.~.~> Asymmetrical FET (any asymmetry in S/D profile, gate spacing, etc.) (437/40 AS) |
| FOR 176 | DD | .~.~.~.~> DMOS/vertical FET (437/40 DM) |
| FOR 177 | DD | .~.~.~.~> Gate specific (specifics of gate insulator/structure/material/ contact) (437/40 GS) |
| FOR 178 | DD | .~.~.~.~> Junction FET/static induction transistor (437/40 JF) |
| FOR 179 | DD | .~.~.~.~> Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC) |
| FOR 180 | DD | .~.~.~.~> Recessed gate (437/40 RG) |
| FOR 181 | DD | .~.~.~.~> Schottky gate/MESFET (controls over RG) (437/40 SH) |
| FOR 182 | DD | .~.~.~.~> Sidewall (not LDD's) (437/40 SW) |
| FOR 183 | DD | .~.~.~.~> Thin film transistor inverted/staggered (437/40 TFI) |
| FOR 184 | DD | .~.~.~.~> Thin film transistor (437/40 TFT) |