US PATENT SUBCLASS 438 / FOR 154
.~.~ Ion beam implantation (437/20)

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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 154.~.~ Ion beam implantation (437/20)

DEFINITION

Classification: 438/FOR.154

Ion beam implantation:

Foreign art collection for processes involving penetration of the surface of a semiconductor substrate with ion beams, i.e., charged negative or positive particles, functioning as a dopant carrier or dopant modifier possessing sufficient kinetic energy to form a junction region in the substrate, e.g., P+, P-, N+, N-, PN, NPN, etc., metal semiconductor junction exhibiting rectifying properties, etc.