US PATENT SUBCLASS 438 / FOR 169
.~.~.~ Using oblique beam (437/35)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 150  DF  .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5}
FOR 155  DF  .~.~ Of semiconductor on insulating substrate (437/21) {14}
FOR 169.~.~.~ Using oblique beam (437/35)

DEFINITION

Classification: 438/FOR.169

Using oblique beam:

Foreign art collection for processes involving implanting ions other than right angle with respect to plane of substrate.