| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| 142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
| 197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
| 268 | DF | .~.~ Vertical channel {3} |
| 270 | DF | .~.~.~ Gate electrode in trench or recess in semiconductor substrate {2} |
| 272 | | .~.~.~.~ Totally embedded in semiconductive layers |