US PATENT SUBCLASS 438 / 268
.~.~ Vertical channel

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
268.~.~ Vertical channel {3}
269  DF  .~.~.~> Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer
270  DF  .~.~.~> Gate electrode in trench or recess in semiconductor substrate {2}
273  DF  .~.~.~> Having integral short of source and base regions {1}

DEFINITION

Classification: 438/268

Vertical channel:

(under subclass 197) Process for making a insulated gate

field effect transistor wherein the active channel is configured to provide, in whole or in part, a vertically conductive pathway between source and drain regions.