US PATENT SUBCLASS 438 / 270
.~.~.~ Gate electrode in trench or recess in semiconductor substrate

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
268  DF  .~.~ Vertical channel {3}
270.~.~.~ Gate electrode in trench or recess in semiconductor substrate {2}
271  DF  .~.~.~.~> V-gate
272  DF  .~.~.~.~> Totally embedded in semiconductive layers

DEFINITION

Classification: 438/270

Gate electrode in trench or recess in semiconductor substrate:

(under subclass 268) Process for making an insulated gate field effect transistor wherein the gate electrode is formed in a groove or recess in the semiconductor substrate.

SEE OR SEARCH THIS CLASS, SUBCLASS:

259, for a process of making a floating gate-type insulated gate field effect transistor having a gate electrode formed in a groove located in the semiconductive substrate.