US PATENT SUBCLASS 438 / 269
.~.~.~ Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
268  DF  .~.~ Vertical channel {3}
269.~.~.~ Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer

DEFINITION

Classification: 438/269

Utilizing epitaxial semiconductor layer grown through an opening in an insulating layer:

(under subclass 268) Process for making an insulated gate field effect transistor wherein a epitaxial semiconductor layer is deposited through an opening in an insulating layer upon a semiconductor substrate.