US PATENT SUBCLASS 438 / FOR 349
.~ Forming plural layered electrode (437/189)


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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 340  DF  MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13}
FOR 349.~ Forming plural layered electrode (437/189) {6}
FOR 350  DF  .~.~> Including central layer acting as barrier between outer layers (437/190)
FOR 351  DF  .~.~> Of polysilicon only (437/191)
FOR 352  DF  .~.~> Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192)
FOR 353  DF  .~.~> Including polycrystalline silicon layer (437/193)
FOR 354  DF  .~.~> Including Al (Aluminum) layer (437/194)
FOR 355  DF  .~.~> Including layer separated by insulator (437/195)


DEFINITION

Classification: 438/FOR.349

Forming plural layered electrode:

Foreign art collection for processes for making the electrode in multiply layers.