438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
FOR 340 | DF | MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13} |
FOR 349 | .~ Forming plural layered electrode (437/189) {6} | |
FOR 350 | DF | .~.~> Including central layer acting as barrier between outer layers (437/190) |
FOR 351 | DF | .~.~> Of polysilicon only (437/191) |
FOR 352 | DF | .~.~> Including refractory metal layer of Ti (Titanium), Zr (Zirconium), Hf (Hafnium), V (Vanadium), Nb (Niobium), Ta (Tantalum), Cr (Chromium), Mo (Molybdenum), W (Tungsten) (437/192) |
FOR 353 | DF | .~.~> Including polycrystalline silicon layer (437/193) |
FOR 354 | DF | .~.~> Including Al (Aluminum) layer (437/194) |
FOR 355 | DF | .~.~> Including layer separated by insulator (437/195) |