| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| FOR 340 |  | MAKING OR ATTACHING ELECTRODE ON OR TO SEMICONDUCTOR, OR SECURING COMPLETED SEMICONDUCTOR TO MOUNTING OR HOUSING (437/180) {13} |
| FOR 341 | DF | .~> Forming transparent electrode (437/181) |
| FOR 342 | DF | .~> Forming beam electrode (437/182) |
| FOR 343 | DF | .~> Forming bump electrode (437/183) |
| FOR 344 | DF | .~> Electrode formed on substrate composed of elements of Group III and Group V semiconductor compound (437/184) |
| FOR 345 | DF | .~> Electrode formed on substrate composed of elements of Group II and Group VI semiconductor compound (437/185) |
| FOR 346 | DF | .~> Single polycrystalline electrode layer on substrate (437/186) |
| FOR 347 | DF | .~> Single metal layer electrode on substrate (437/187) {1} |
| FOR 349 | DF | .~> Forming plural layered electrode (437/189) {6} |
| FOR 356 | DF | .~> Forming electrode of alloy or electrode of a compound of Si (Silicon) (437/196) {4} |
| FOR 363 | DF | .~> Depositing electrode in preformed recess in substrate (437/203) |
| FOR 364 | DF | .~> Including positioning of point contact (437/204) |
| FOR 365 | DF | .~> Making plural devices (437/205) {2} |
| FOR 369 | DF | .~> Securing completed semiconductor to mounting, housing or external lead (437/209) {6} |