US PATENT SUBCLASS 438 / 191
.~.~ Having heterojunction

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
186  DF  .~ Having junction gate (e.g., JFET, SIT, etc.) {9}
191.~.~ Having heterojunction

DEFINITION

Classification: 438/191

Having heterojunction:

(under subclass 186) Process for making a junction gate field

effect transistor which possesses an interface between two dissimilar semiconductor materials which constitute a junction.