US PATENT SUBCLASS 438 / 445
.~.~.~ Masking of groove sidewall

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
444  DF  .~.~ Preliminary etching of groove {1}
445.~.~.~ Masking of groove sidewall {2}
446  DF  .~.~.~.~> Polysilicon containing sidewall
447  DF  .~.~.~.~> Dopant addition

DEFINITION

Classification: 438/445

Masking of groove sidewall:

(under subclass 444) Process utilizing a layer in contact with the groove sidewalls which serves as a protective covering during either an etching or oxidation step.