US PATENT SUBCLASS 438 / 444
.~.~ Preliminary etching of groove

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
444.~.~ Preliminary etching of groove {1}
445  DF  .~.~.~> Masking of groove sidewall {2}

DEFINITION

Classification: 438/444

Preliminary etching of groove:

(under subclass 439) Process including a preliminary step of etching a trench into the semiconductive substrate followed by locally oxidizing the trench surfaces to form the recessed oxide therein.

SEE OR SEARCH THIS CLASS, SUBCLASS:

421, for a process of forming electrically isolated lateral semiconductive regions utilizing an air-gap separation.

425, for a process of forming a grooved and refilled electrical isolation structure including a step of forming an embedded localized oxidation region of the semiconductor substrate within or adjoining the groove.