US PATENT SUBCLASS 438 / 439
.~ Recessed oxide by localized oxidation (i.e., LOCOS)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439.~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
440  DF  .~.~> Including nondopant implantation
441  DF  .~.~> With electrolytic treatment step
442  DF  .~.~> With epitaxial semiconductor layer formation
443  DF  .~.~> Etchback of recessed oxide
444  DF  .~.~> Preliminary etching of groove {1}
448  DF  .~.~> Utilizing oxidation mask having polysilicon component
449  DF  .~.~> Dopant addition {2}
452  DF  .~.~> Plural oxidation steps to form recessed oxide
453  DF  .~.~> And electrical conductor formation (i.e., metallization)

DEFINITION

Classification: 438/439

Recessed oxide by localized oxidation (i.e., LOCOS):

(under subclass 400) Process for making electrically isolated laterally spaced semiconductor regions including the step of oxidizing a portion of a semiconductive material to form an embedded oxide (e.g., field oxide) therein which isolates the laterally adjacent semiconductive regions.