US PATENT SUBCLASS 438 / 448
.~.~ Utilizing oxidation mask having polysilicon component

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
448.~.~ Utilizing oxidation mask having polysilicon component

DEFINITION

Classification: 438/448

Utilizing oxidation mask having polysilicon component:

(under subclass 439) Process utilizing a layer in contact with the substrate having a polysilicon containing component which serves as a protective covering during the localized oxidation step.