US PATENT SUBCLASS 438 / 449
.~.~ Dopant addition

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
449.~.~ Dopant addition {2}
450  DF  .~.~.~> Implanting through recessed oxide
451  DF  .~.~.~> Plural doping steps

DEFINITION

Classification: 438/449

Dopant addition:

(under subclass 439) Process including a step of introducing an electrically active dopant species into semiconductive regions of the substrate.