US PATENT SUBCLASS 438 / 450
.~.~.~ Implanting through recessed oxide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
449  DF  .~.~ Dopant addition {2}
450.~.~.~ Implanting through recessed oxide

DEFINITION

Classification: 438/450

Implanting through recessed oxide:

(under subclass 449) Process wherein the dopant species is implanted through the recessed oxide into the semiconductive regions therebeneath.