US PATENT SUBCLASS 438 / 452
.~.~ Plural oxidation steps to form recessed oxide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
452.~.~ Plural oxidation steps to form recessed oxide

DEFINITION

Classification: 438/452

Plural oxidation steps to form recessed oxide:

(under subclass 439) Process having multiple steps of oxidizing the semiconductor substrate in the region of the recessed oxide.