.~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
440
.~.~ Including nondopant implantation
DEFINITION
Classification: 438/440
Including nondopant implantation:
(under subclass 439) Process including a step of ion implanting a nonelectrically active impurity species into any region of the semiconductor substrate.
(1) Note. The nondopant may serve to alter the oxidation rate of the implanted region.
SEE OR SEARCH THIS CLASS, SUBCLASS:
423, for a process of forming a laterally spaced isolation structure involving the implantation of an ion which reacts with the substrate to form an insulative material.
