US PATENT SUBCLASS 438 / 442
.~.~ With epitaxial semiconductor layer formation

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
442.~.~ With epitaxial semiconductor layer formation

DEFINITION

Classification: 438/442

With epitaxial semiconductor layer formation:

(under subclass 439) Process including a step of epitaxially growing a single crystal semiconductor layer on the substrate.