US PATENT SUBCLASS 438 / 446
.~.~.~.~ Polysilicon containing sidewall

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

400  DF  FORMATION OF ELECTRICALLY ISOLATED LATERAL SEMICONDUCTIVE STRUCTURE {10}
439  DF  .~ Recessed oxide by localized oxidation (i.e., LOCOS) {9}
444  DF  .~.~ Preliminary etching of groove {1}
445  DF  .~.~.~ Masking of groove sidewall {2}
446.~.~.~.~ Polysilicon containing sidewall

DEFINITION

Classification: 438/446

Polysilicon containing sidewall:

(under subclass 445) Process utilizing a polysilicon containing component for masking the groove sidewalls.