US PATENT SUBCLASS 438 / FOR 225
.~.~.~ Grooved air-gap only (437/65)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 221  DF  .~ Including isolation step (437/61) {4}
FOR 224  DF  .~.~ Using vertical dielectric (air-gap/insulator) and horizontal PN junction (437/64) {3}
FOR 225.~.~.~ Grooved air-gap only (437/65) {1}
FOR 226  DF  .~.~.~.~> V-groove (437/66)

DEFINITION

Classification: 438/FOR.225

Grooved air gap only:

Foreign art collection for processes wherein the dielectric produced is a furrowed opening to air only.