US PATENT SUBCLASS 438 / 664
.~.~.~.~ Forming silicide

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

584  DF  COATING WITH ELECTRICALLY OR THERMALLY CONDUCTIVE MATERIAL {2}
597  DF  .~ To form ohmic contact to semiconductive material {24}
660  DF  .~.~ Including heat treatment of conductive layer {2}
663  DF  .~.~.~ Rapid thermal anneal {1}
664.~.~.~.~ Forming silicide

DEFINITION

Classification: 438/664

Forming silicide:

(under subclass 663) Processes wherein the rapid thermal anneal results in the formation of a single silicide layer by the reaction of a conductive layer and a silicon substrate region.