US PATENT SUBCLASS 438 / 304
.~.~.~.~.~ Conductive sidewall component

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
301  DF  .~.~.~ Source or drain doping {3}
303  DF  .~.~.~.~ Utilizing gate sidewall structure {2}
304.~.~.~.~.~ Conductive sidewall component

DEFINITION

Classification: 438/304

Conductive sidewall component:

(under subclass 303) Process wherein the gate sidewall structure is composed at least in part of a conductive component.