US PATENT SUBCLASS 438 / 301
.~.~.~ Source or drain doping

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
301.~.~.~ Source or drain doping {3}
302  DF  .~.~.~.~> Oblique implantation
303  DF  .~.~.~.~> Utilizing gate sidewall structure {2}
306  DF  .~.~.~.~> Plural doping steps {1}

DEFINITION

Classification: 438/301

Source or drain doping:

(under subclass 299) Process having a step for the self-aligned introduction of electrically active dopant

species into the semiconductor regions of the substrate to form the transistor source or drain regions or portions thereof.