438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
142 | DF | MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6} |
197 | DF | .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24} |
299 | DF | .~.~ Self-aligned {2} |
301 | .~.~.~ Source or drain doping {3} | |
302 | DF | .~.~.~.~> Oblique implantation |
303 | DF | .~.~.~.~> Utilizing gate sidewall structure {2} |
306 | DF | .~.~.~.~> Plural doping steps {1} |