US PATENT SUBCLASS 438 / 303
.~.~.~.~ Utilizing gate sidewall structure

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
301  DF  .~.~.~ Source or drain doping {3}
303.~.~.~.~ Utilizing gate sidewall structure {2}
304  DF  .~.~.~.~.~> Conductive sidewall component
305  DF  .~.~.~.~.~> Plural doping steps

DEFINITION

Classification: 438/303

Utilizing gate sidewall structure:

(under subclass 301) Process having structure on the sidewall of the gate electrode or gate insulator which is utilized as the previously formed device feature.