US PATENT SUBCLASS 438 / 305
.~.~.~.~.~ Plural doping steps

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

142  DF  MAKING FIELD EFFECT DEVICE HAVING PAIR OF ACTIVE REGIONS SEPARATED BY GATE STRUCTURE BY FORMATION OR ALTERATION OF SEMICONDUCTIVE ACTIVE REGIONS {6}
197  DF  .~ Having insulated gate (e.g., IGFET, MISFET, MOSFET, etc.) {24}
299  DF  .~.~ Self-aligned {2}
301  DF  .~.~.~ Source or drain doping {3}
303  DF  .~.~.~.~ Utilizing gate sidewall structure {2}
305.~.~.~.~.~ Plural doping steps

DEFINITION

Classification: 438/305

Plural doping steps:

(under subclass 303) Process including multiple steps of introducing dopant species into the semiconductive regions of the substrate.