US PATENT SUBCLASS 438 / 460
SEMICONDUCTOR SUBSTRATE DICING

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

460SEMICONDUCTOR SUBSTRATE DICING {5}
461  DF  .~> Beam lead formation
462  DF  .~> Having specified scribe region structure (e.g., alignment mark, plural grooves, etc.)
463  DF  .~> By electromagnetic irradiation (e.g., electron, laser, etc.)
464  DF  .~> With attachment to temporary support or carrier
465  DF  .~> Having a perfecting coating

DEFINITION

Classification: 438/460

SEMICONDUCTOR SUBSTRATE DICING:

(under the class definition) Process including the step of separating the semiconductor substrate into plural individual bodies (e.g., die, etc.) usually by removal of material therefrom or by cleavage thereof.

SEE OR SEARCH THIS CLASS, SUBCLASS:

113, for a process of packaging (e.g., mounting, encapsulating, etc.) of treating a packaged semiconductor device having a step of dividing a semiconductor substrate into discrete individual units.

SEE OR SEARCH CLASS

83, Cutting, for a generic process of cutting a substrate into discrete individual units.

225, Severing by Tearing or Breaking,

1+, for methods.

451, Abrading, for a process of dicing by abrading.