| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
| FOR 149 | DF | INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7} |
| FOR 150 | DF | .~ Using energy beam to introduce dopant or modify dopant distribution (437/ 16) {5} |
| FOR 155 | DF | .~.~ Of semiconductor on insulating substrate (437/21) {14} |
| FOR 173 | DF | .~.~.~ Involving Schottky contact formation (437/39) {12} |
| FOR 179 | | .~.~.~.~ Layered channel (e.g., HEMT, MODFET, 2DEG, heterostructure FETS) (437/40 LC) |