US PATENT SUBCLASS 438 / 79
.~.~.~.~.~ Having blooming suppression structure (e.g., antiblooming drain, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

48  DF  MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL {5}
57  DF  .~ Responsive to electromagnetic radiation {22}
73  DF  .~.~ Making electromagnetic responsive array {3}
75  DF  .~.~.~ Charge transfer device (e.g., CCD, etc.) {3}
78  DF  .~.~.~.~ Having structure to improve output signal (e.g., exposure control structure, etc.) {1}
79.~.~.~.~.~ Having blooming suppression structure (e.g., antiblooming drain, etc.)

DEFINITION

Classification: 438/79

Having blooming suppression structure (e.g., antiblooming drain, etc.):

(under subclass 78) Process for making a charge transfer device wherein the structural means to improve the output signal prevents spill over of a large amount of signal charge generated at a storage site which receives an electromagnetic radiation responsive input signal of very high intensity to adjacent storage sites.

(1) Note. The antiblooming suppression structure may include a drain structure for removing charge from storage sites.

(2) Note. The antiblooming drain structure may be located in the device beneath storage sites rather than on its surface.