438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
|
48 | DF | MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL {5} |
57 | | .~ Responsive to electromagnetic radiation {22} |
58 | DF | .~.~> Gettering of substrate |
59 | DF | .~.~> Having diverse electrical device {1} |
61 | DF | .~.~> Continuous processing {1} |
63 | DF | .~.~> Particulate semiconductor component |
64 | DF | .~.~> Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor {2} |
68 | DF | .~.~> Substrate dicing |
69 | DF | .~.~> Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) {3} |
73 | DF | .~.~> Making electromagnetic responsive array {3} |
82 | DF | .~.~> Having organic semiconductor component |
83 | DF | .~.~> Forming point contact |
84 | DF | .~.~> Having selenium or tellurium elemental semiconductor component |
85 | DF | .~.~> Having metal oxide or copper sulfide compound semiconductive component {1} |
87 | DF | .~.~> Graded composition |
88 | DF | .~.~> Direct application of electric current |
89 | DF | .~.~> Fusion or solidification of semiconductor region |
90 | DF | .~.~> Including storage of electrical charge in substrate |
91 | DF | .~.~> Avalanche diode |
92 | DF | .~.~> Schottky barrier junction |
93 | DF | .~.~> Compound semiconductor {2} |
96 | DF | .~.~> Amorphous semiconductor |
97 | DF | .~.~> Polycrystalline semiconductor |
98 | DF | .~.~> Contact formation (i.e., metallization) |