| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS | 
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| 48 | DF | MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL {5} | 
| 57 |  | .~ Responsive to electromagnetic radiation {22} | 
| 58 | DF | .~.~> Gettering of substrate | 
| 59 | DF | .~.~> Having diverse electrical device {1} | 
| 61 | DF | .~.~> Continuous processing {1} | 
| 63 | DF | .~.~> Particulate semiconductor component | 
| 64 | DF | .~.~> Packaging (e.g., with mounting, encapsulating, etc.) or treatment of packaged semiconductor {2} | 
| 68 | DF | .~.~> Substrate dicing | 
| 69 | DF | .~.~> Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.) {3} | 
| 73 | DF | .~.~> Making electromagnetic responsive array {3} | 
| 82 | DF | .~.~> Having organic semiconductor component | 
| 83 | DF | .~.~> Forming point contact | 
| 84 | DF | .~.~> Having selenium or tellurium elemental semiconductor component | 
| 85 | DF | .~.~> Having metal oxide or copper sulfide compound semiconductive component {1} | 
| 87 | DF | .~.~> Graded composition | 
| 88 | DF | .~.~> Direct application of electric current | 
| 89 | DF | .~.~> Fusion or solidification of semiconductor region | 
| 90 | DF | .~.~> Including storage of electrical charge in substrate | 
| 91 | DF | .~.~> Avalanche diode | 
| 92 | DF | .~.~> Schottky barrier junction | 
| 93 | DF | .~.~> Compound semiconductor {2} | 
| 96 | DF | .~.~> Amorphous semiconductor | 
| 97 | DF | .~.~> Polycrystalline semiconductor | 
| 98 | DF | .~.~> Contact formation (i.e., metallization) |