(under subclass 57) Process for making a device which is configured to operate in a manner in which an external voltage applied in the reverse-conducting direction of the device junction with sufficient magnitude causes the potential barrier at the junction to breakdown due to electrons or holes gaining sufficient speed to dislodge valence electrons and thus create more hole-electron current carriers resulting in a sudden change from high dynamic electrical resistance to very low dynamic resistance.
(1) Note. The terms Zener diode and Zener breakdown voltage are used rather loosely in that the breakdown mechanism above about 6 volts is thought to be due to avalanching and that below about 6 volts is thought to be due essentially to tunnelling.
SEE OR SEARCH THIS CLASS, SUBCLASS:
380, for a process of making an avalanche diode which is not responsive to electromagnetic radiation.
SEE OR SEARCH CLASS
257, Active Solid-State Devices (e.g., Transistors, Solid-State Diodes),
199, for an avalanche diode in a noncharge transfer device
having a heterojunction, subclass 438 for a light-responsive avalanche junction device, subclass 481 for an avalanche diode having a Schottky barrier, subclass 551 for an avalanche diode used as a voltage reference element combined with pn junction isolation means in an integrated circuit, and subclasses 603+ for avalanche diodes in general.
