US PATENT SUBCLASS 438 / 75
.~.~.~ Charge transfer device (e.g., CCD, etc.)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

48  DF  MAKING DEVICE OR CIRCUIT RESPONSIVE TO NONELECTRICAL SIGNAL {5}
57  DF  .~ Responsive to electromagnetic radiation {22}
73  DF  .~.~ Making electromagnetic responsive array {3}
75.~.~.~ Charge transfer device (e.g., CCD, etc.) {3}
76  DF  .~.~.~.~> Majority signal carrier (e.g., buried or bulk channel, peristaltic, etc.)
77  DF  .~.~.~.~> Compound semiconductor
78  DF  .~.~.~.~> Having structure to improve output signal (e.g., exposure control structure, etc.) {1}

DEFINITION

Classification: 438/75

Charge transfer device (e.g., CCD, etc.):

(under subclass 73) Process for making a structure in which storage sites for packets of electrical charge are induced at or below the semiconductor surface by an electric field applied by serially arranged gate electrodes formed thereupon and wherein carrier potential energy per unit charge minima are established at a given storage site and such minima are transferred in a serial manner via an active channel region to one or more adjacent storage sites.