US PATENT SUBCLASS 438 / FOR 268
.~.~ Growing single layer in multi-steps (437/108)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

FOR 149  DF  INCLUDING FORMING A SEMICONDUCTOR JUNCTION (437/15) {7}
FOR 241  DF  .~ Doping during fluid growth of semiconductor material on substrate (437/81) {25}
FOR 268.~.~ Growing single layer in multi-steps (437/108) {4}
FOR 269  DF  .~.~.~> Polycrystalline layers (437/109)
FOR 270  DF  .~.~.~> Using modulated dopants or materials, e.g., superlattice, etc. (437/110)
FOR 271  DF  .~.~.~> Using preliminary or intermediate metal layer (437/111)
FOR 272  DF  .~.~.~> Growing by varying rates (437/112)

DEFINITION

Classification: 438/FOR.268

Growing single layer in multi-steps:

Foreign art collection for processes for growing a layer of material in plural operations (steps).