US PATENT SUBCLASS 438 / 555
.~.~ Laterally under mask opening

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
555.~.~ Laterally under mask opening

DEFINITION

Classification: 438/555

Laterally under mask opening:

(under subclass 542) Processes wherein the direction of diffusion for the electrically active impurity includes a component parallel to the major surface of the masking layer.