| 438 / | HD | SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS |
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| 510 | DF | INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7} |
| 542 |  | .~ Diffusing a dopant {15} |
| 543 | DF | .~.~> To control carrier lifetime (i.e., deep level dopant) |
| 544 | DF | .~.~> To solid-state solubility concentration |
| 545 | DF | .~.~> Forming partially overlapping regions |
| 546 | DF | .~.~> Plural dopants in same region (e.g., through same mask opening, etc.) {1} |
| 548 | DF | .~.~> Plural dopants simultaneously in plural regions |
| 549 | DF | .~.~> Single dopant forming plural diverse regions (e.g., forming regions of different concentrations or of different depths, etc.) |
| 550 | DF | .~.~> Nonuniform heating |
| 551 | DF | .~.~> Using multiple layered mask {1} |
| 553 | DF | .~.~> Using metal mask |
| 554 | DF | .~.~> Outwardly |
| 555 | DF | .~.~> Laterally under mask opening |
| 556 | DF | .~.~> Edge diffusion by using edge portion of structure other than masking layer to mask |
| 557 | DF | .~.~> From melt |
| 558 | DF | .~.~> From solid dopant source in contact with semiconductor region {6} |
| 565 | DF | .~.~> From vapor phase {3} |