US PATENT SUBCLASS 438 / 543
.~.~ To control carrier lifetime (i.e., deep level dopant)

Current as of: June, 1999
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438 /   HD   SEMICONDUCTOR DEVICE MANUFACTURING: PROCESS

510  DF  INTRODUCTION OF CONDUCTIVITY MODIFYING DOPANT INTO SEMICONDUCTIVE MATERIAL {7}
542  DF  .~ Diffusing a dopant {15}
543.~.~ To control carrier lifetime (i.e., deep level dopant)

DEFINITION

Classification: 438/543

To control carrier lifetime (i.e., deep level dopant):

(under subclass 542) Processes involving the introduction by diffusion of an impurity serving to form energy levels in the forbidden band of a semiconductor material that can act as traps for charge carriers (e.g., gold (Au), chromium (Cr), iron (Fe), nickel (Ni), etc.).